Signature of electron-plasmon quantum kinetics in GaAs

被引：60

作者：

Vu, QT

Haug, H

Hügel, WA

Chatterjee, S

Wegener, M

机构：

[1] Goethe Univ Frankfurt, Inst Theoret Phys, D-60054 Frankfurt, Germany

[2] Univ Karlsruhe, TH, Inst Angew Phys, D-76128 Karlsruhe, Germany

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.85.3508

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We predict a carrier-density dependent oscillation, which is superimposed on the decay of the coherent control photon echo signal of a semiconductor. It reflects the oscillatory transfer of excitation back and forth between electrons and a mixed plasmon-phonon mode. This signature provides obvious and unique evidence for the finite duration of the interaction process, i.e., evidence for the collective Coulomb quantum kinetics. The theoretical predictions for the model semiconductor GaAs are reproduced in corresponding experiments.

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页码：3508 / 3511

页数：4

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