Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots

被引：28

作者：

Manz, YM ^{[1
]}

Schmidt, OG ^{[1
]}

Eberl, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-50569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report room-temperature injection lasing of self-assembled InP/GaInP quantum dots. Stimulated emission occurs via the ground state at lambda = 728 nm for cavities as short as 0.5 mm. Threshold current densities of 2.3 kA/cm(2) and external differential quantum efficiencies of 8.5% have been measured for 2 mm long devices. Light output power as high as 250 mW without saturation effects can be reached in pulsed excitation. Analysis of temperature-dependent laser emission indicates the thermal coupling of charge carriers in different quantum dots at higher temperatures. (C) 2000 American Institute of Physics. [S0003-6951(00)02823-0].

引用

页码：3343 / 3345

页数：3

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