Self-assembling InP quantum dots for red lasers

被引：23

作者：

Eberl, K ^{[1
]}

Kurtenbach, A ^{[1
]}

Zundel, M ^{[1
]}

JinPhillipp, JY ^{[1
]}

Phillipp, F ^{[1
]}

Moritz, A ^{[1
]}

Wirth, R ^{[1
]}

Hangleiter, A ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS,D-70569 STUTTGART,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

D O I：

10.1016/S0022-0248(96)00813-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-assembling InP quantum dots are prepared by solid source molecular beam epitaxy. The dots have a diameter of 15 to 50 nm and a height of 5 to 15 nm depending on the nominally deposited InP layer thickness between 1.5 and 7 ML. Transmission electron microscopy measurements are presented to provide information about the structural properties. The InP quantum dots are embedded in Ga0.52In0.48P lattice matched to the GaAs (100) substrate and show a strong and narrow photoluminescence at room temperature in the visible range. Laser structures are prepared with one layer of. InP quantum dots within a 160 nm thick Ca0.52In0.48P waveguide region. 0.7 mu m thick AIInP layers are used as cladding layers below and above the waveguide. We observe lasing of the InP quantum dots at room temperature in optically pumped cleaved samples with a length of 500 mu m.

引用

页码：702 / 706

页数：5

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