Conductivity control of SiC by in-situ doping and ion implantation

被引：24

作者：

Kimoto, T ^{[1
]}

Itoh, A ^{[1
]}

Inoue, N ^{[1
]}

Takemura, O ^{[1
]}

Yamamoto, T ^{[1
]}

Nakajima, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 60601, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

conductivity control; in-situ impurity doping; chemical vapor deposition; ion implantation; pn junction diode;

D O I：

10.4028/www.scientific.net/MSF.264-268.675

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent progress in conductivity control of silicon carbide obtained by the authors' group has been reviewed. The lowest doping level of unintentionally doped epilayers is 0.5 similar to 1x10(14)cm(-3) on a Si face and 3x10(15)cm(-3) on a C face. In-situ n- and p-type impurity doping from the 10(15) to 10(19)cm(-3) range can easily be achieved by the introduction of N-2 and trimethylaluminum, respectively. We found significant dependencies of impurity incorporation on growth temperature and substrate's off-angle. Electrical activation in nitrogen, aluminum, and boron ion implantations and pn junction characteristics formed by implantation are discussed. Vanadium ion implantation can successfully be applied to obtain semi-insulating properties.

引用

页码：675 / 680

页数：6

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