Formation of semi-insulating 6H-SiC layers by vanadium ion implantations

被引：43

作者：

Kimoto, T ^{[1
]}

Nakajima, T ^{[1
]}

Matsunami, H ^{[1
]}

Nakata, T ^{[1
]}

Inoue, M ^{[1
]}

机构：

[1] ION ENGN RES INST,HIRAKATA,OSAKA 57301,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 08期

关键词：

D O I：

10.1063/1.117075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vanadium ion (V+) implantation has been successfully applied to the formation of semiinsulating 6H-SiC layers. The resistivity of V+-implanted layers strongly depended on the conduction type of initial 6H-SiC crystals. The resistivity at room temperature exceeded 10(12) Omega cm and 10(6) Omega cm for p- and n-type samples, respectively. Compensation mechanism is discussed based on the temperature dependence of resistivity. This technique will be useful for device isolation, edge termination, and reduction of parasitic impedance of SiC devices. (C) 1996 American Institute of Physics.

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页码：1113 / 1115

页数：3

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