Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers

被引：43

作者：

Im, H. C.

Choo, D. C.

Kim, T. W. ^{[1
]}

Kim, J. H.

Seo, J. H.

Kim, Y. K.

机构：

[1] Hanyang Univ, Res Inst Informat Display, Div Elect & Comp Engn, Seoul 133791, South Korea

[2] Hongik Univ, Dept Elect Engn, Seoul 121791, South Korea

[3] Hongik Univ, Dept Informat Display Engn, Seoul 121791, South Korea

[4] Hongik Univ, COMID, Seoul 121791, South Korea

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 12期

关键词：

organic light-emitting diodes; electrical properties; optical properties; nickel oxide;

D O I：

10.1016/j.tsf.2006.10.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and the optical properties of organic light-emitting diodes (OLEDs) fabricated utilizing nickel-oxide (NiO) buffer layers between the anodes and the hole transport layers were investigated. The NiO layer was formed by using a thermally evaporated nickel thin film and a subsequent oxidation process. The tunneling holes in the OLED were increased due to the existence of the NiO layer between the anode and the hole transport layer, resulting in enhanced efficiency for the OLED. These results indicate that OLEDs with NiO buffer layers hold promise for potential applications in highly-efficient flat-panel displays. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：5099 / 5102

页数：4

共 19 条

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