Measurement of silicon surface recombination velocity using ultrafast pump-probe reflectivity in the near infrared

被引：62

作者：

Sabbah, AJ ^{[1
]}

Riffe, DM ^{[1
]}

机构：

[1] Utah State Univ, Dept Phys, Logan, UT 84322 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.1316047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that ultrafast pump-probe reflectivity measurements from bulk Si samples using a Ti:sapphire femtosecond oscillator (lambda = 800 nm) can be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than similar to 10(4) cms(-1). (C) 2000 American Institute of Physics. [S0021-8979(00)05222-1].

引用

页码：6954 / 6956

页数：3

共 36 条

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