Measurement of silicon surface recombination velocity using ultrafast pump-probe reflectivity in the near infrared

被引:62
作者
Sabbah, AJ [1 ]
Riffe, DM [1 ]
机构
[1] Utah State Univ, Dept Phys, Logan, UT 84322 USA
关键词
D O I
10.1063/1.1316047
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate that ultrafast pump-probe reflectivity measurements from bulk Si samples using a Ti:sapphire femtosecond oscillator (lambda = 800 nm) can be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than similar to 10(4) cms(-1). (C) 2000 American Institute of Physics. [S0021-8979(00)05222-1].
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页码:6954 / 6956
页数:3
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