A study of the effect of deuterium on stress-induced leakage current

被引：13

作者：

Mitani, Y ^{[1
]}

Satake, H ^{[1
]}

Ito, H ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Corp, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 6B期

关键词：

deuterium; hydrogen; gate oxide; stress-induced leakage current; trap creation; Fowler-Nordheim electron injection;

D O I：

10.1143/JJAP.39.L564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of deuterium incorporation into SiO2 on the stress-induced leakage current (SILC) of the gate oxide was investigated using deuterium pyrogenic oxidation and deuterium annealing. As a result, we found that the SILC is reduced by deuterium pyrogenic oxidation under Fowler-Nordheim (F-N) electron injection from the substrate, and that the SILC is not improved by deuterium annealing, although a large amount of deuterium is contained in the SiO2 film.

引用

页码：L564 / L566

页数：3

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