High performance 1.55μm polarisation-insensitive semiconductor optical amplifier based on low-tensile-strained bulk GaInAsP

被引：51

作者：

Emery, JY

Ducellier, T

Bachmann, M

Doussiere, P

Pommereau, F

Ngo, R

Gaborit, F

Goldstein, L

Laube, G

Barrau, J

机构：

[1] Alcatel Alsthom Rech, Alcatel Corp Res Ctr, F-91460 Marcoussis, France

[2] Alcatel Telecom Res Ctr, D-70435 Stuttgart, Germany

[3] Inst Natl Sci Appl, CNRS, Phys Solides Lab, F-31077 Toulouse, France

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 12期

关键词：

semiconductor junction lasers; fibre amplifiers;

D O I：

10.1049/el:19970703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance, polarisation-independent semiconductor optical amplifiers based on low-tensile-strained separate confinement heterostructures and integrated with a double core taper have been realised. Fibre-to-fibre gain as large as 29dB, with TE-TM polarisation sensitivity as low as 0.3dB and an output saturation power of similar to 9dBm are currently achieved.

引用

页码：1083 / 1084

页数：2

共 9 条

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