Behavior of NBTI under AC dynamic circuit conditions

被引：70

作者：

Abadeer, W ^{[1
]}

Ellis, W ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

D O I：

10.1109/RELPHY.2003.1197714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The NBTI mechanism was investigated for a 5 nm gate oxide technology under AC dynamic circuit conditions in, the frequency range of 2 MHz to 20 MHz and device "ON" duty factor in the range of 30% to 70%. the increase in the magnitude of threshold voltage, and the decrease in device current under AC operation are generally lower than that of DC operation by 3X or higher. The time power function dependency of the degradation at sufficient stress times, are lower than of DC operation. Theses results indicate that more emphasis needs to be placed on AC behavior of NBITI for scaled CMOS technologies.

引用

页码：17 / 22

页数：6

共 16 条

[1]

ABADEER W, 1993, INT REL PHY, P147, DOI 10.1109/RELPHY.1993.283289

[2]

AONO H, 1997, P INT REL PHYS S, P282

[3]

Baker F. K., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P443, DOI 10.1109/IEDM.1989.74317

[4] MECHANISM OF NEGATIVE-BIAS-TEMPERATURE INSTABILITY [J].

BLAT, CE ;

NICOLLIAN, EH ;

POINDEXTER, EH .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1712-1720

[5] Threshold voltage drift in PMOSFETS due to NBTI and HCI [J].

Chaparala, P ;

Shibley, J ;

Lim, P .

2000 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2000, :95-97

[6] INTERFACE STATE GENERATION UNDER LONG-TERM POSITIVE-BIAS TEMPERATURE STRESS FOR A P+ POLY GATE MOS STRUCTURE [J].

HIRUTA, Y ;

IWAI, H ;

MATSUOKA, F ;

HAMA, K ;

MAEGUCHI, K ;

KANZAKI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1732-1739

[7]

IWAI H, 1989, INT SEM INT SPEC C

[8] NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation [J].

Kimizuka, N ;

Yamaguchi, K ;

Imai, K ;

Iizuka, T ;

Liu, CT ;

Keller, RC ;

Horiuchi, T .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :92-93

[9] NBTI-channel hot carrier effects in pMOSFETs in advanced CMOS technologies. [J].

LaRosa, G ;

Guarin, F ;

Rauch, S ;

Acovic, A ;

Lukaitis, J ;

Crabbe, E .

1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL, 1997, :282-286

[10]

MANCHANDA K, 1986, P INT REL PHYS S, P183

← 1 2 →