INTERFACE STATE GENERATION UNDER LONG-TERM POSITIVE-BIAS TEMPERATURE STRESS FOR A P+ POLY GATE MOS STRUCTURE

被引：24

作者：

HIRUTA, Y

IWAI, H

MATSUOKA, F

HAMA, K

MAEGUCHI, K

KANZAKI, K

机构：

[1] TOSHIBA MICROELECTR CORP,KAWASAKI 210,JAPAN

[2] TOSHIBA CO LTD,DIV SEMICOND,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1732 / 1739

页数：8

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