CHARACTERIZATION OF THE HEAVILY (NONDEGENERATE) BORON-DOPED SI-SIO2 INTERFACE

被引：2

作者：

GHANNAM, MY

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 11期

关键词：

D O I：

10.1016/0038-1101(87)90080-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1147 / 1152

页数：6

共 9 条

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