INFLUENCE OF FIXED INTERFACE CHARGES ON CURRENT-GAIN FALLOFF OF PLANAR N-P-N TRANSISTORS

被引:11
作者
WERNER, WM [1 ]
机构
[1] TH AACHEN,INST THEORET ELEKTROTECH,D-5100 AACHEN,BUNDES REPUBLIK
关键词
D O I
10.1149/1.2132873
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
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页码:540 / 543
页数:4
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共 17 条
[1]  
BECKER JM, COMMUNICATION
[2]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[3]  
FOGELS EA, 1971, J ELECTROCHEM SOC, V118, P2003
[4]   SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].
GOETZBERGER, A ;
HEINE, V ;
NICOLLIAN, EH .
APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+
[5]   DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].
GRAY, PV ;
BROWN, DM .
APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&
[6]   SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].
GROVE, AS ;
FITZGERALD, DJ .
SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+
[7]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[8]  
GROVE AS, 1964, J APPL PHYS, V35, P2965
[9]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[10]   MATERIAL AND PROCESS CONSIDERATIONS FOR MONOLITHIC LOW-1/F-NOISE TRANSISTORS [J].
KHAJEZAD.H ;
MCCAFFRE.TT .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1518-&