THE DOPED SI-SIO2 INTERFACE

被引：63

作者：

SNEL, J

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 02期

关键词：

D O I：

10.1016/0038-1101(81)90008-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：135 / 139

页数：5

共 11 条

[1] IMPURITY BANDS IN MODERATELY DOPED SEMICONDUCTORS AND THEIR EFFECT ON MOS C-V FREEZE-OUT CHARACTERISTICS [J].

BARBER, HD ;

LEE, KC ;

JONES, JE .

SOLID-STATE ELECTRONICS, 1976, 19 (05) :365-368

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[3] BORON SEGREGATION AT SI-SIO2 INTERFACE AS A FUNCTION OF TEMPERATURE AND ORIENTATION [J].

COLBY, JW ;

KATZ, LE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :409-412

[4] SURFACE RECOMBINATION IN SEMICONDUCTORS [J].

FITZGERALD, DJ ;

GROVE, AS .

SURFACE SCIENCE, 1968, 9 (02) :347-+

[5] LOW-TEMPERATURE HYSTERESIS EFFECTS IN METAL-OXIDE-SILICON CAPACITORS CAUSED BY SURFACE-STATE TRAPPING [J].

GOETZBERGER, A ;

IRVIN, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :1009-+

[6] FREEZE-OUT CHARACTERISTICS OF MOS VARACTOR [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1968, 13 (08) :247-&

[7] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[8]

SNEL JAA, UNPUBLISHED

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P436

[10] INFLUENCE OF FIXED INTERFACE CHARGES ON CURRENT-GAIN FALLOFF OF PLANAR N-P-N TRANSISTORS [J].

WERNER, WM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :540-543

← 1 2 →