ULTRA-THIN SILICON-DIOXIDE BREAKDOWN CHARACTERISTICS OF MOS DEVICES WITH N+ AND P+ POLYSILICON GATES

被引：9

作者：

HOLLAND, S

CHEN, IC

HU, CM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 12期

关键词：

D O I：

10.1109/EDL.1987.26732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：572 / 575

页数：4

共 12 条

[1] QUANTUM YIELD OF ELECTRON-IMPACT IONIZATION IN SILICON [J].

CHANG, C ;

HU, CM ;

BRODERSEN, RW .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :302-309

[2] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J].

CHEN, IC ;

HOLLAND, S ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :164-167

[3]

CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[4] CORRELATION BETWEEN BREAKDOWN AND PROCESS-INDUCED POSITIVE CHARGE TRAPPING IN THIN THERMAL SIO2 [J].

HOLLAND, S ;

HU, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) :1705-1712

[5]

HOLLAND S, UNPUB

[6]

Kobayashi T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P414

[7] TIME-DEPENDENT DEGRADATION OF THIN GATE OXIDE UNDER POST-OXIDATION HIGH-TEMPERATURE ANNEAL [J].

LASSIG, S ;

LIANG, MS .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :160-161

[8] THICKNESS DEPENDENCE OF OXIDE BREAKDOWN UNDER HIGH-FIELD AND CURRENT STRESS [J].

LIANG, MS ;

CHOI, JY .

APPLIED PHYSICS LETTERS, 1987, 50 (02) :104-106

[9] SUBHALF-MICROMETER P-CHANNEL MOSFETS WITH 3.5-NM GATE OXIDE FABRICATED USING X-RAY-LITHOGRAPHY [J].

MIYAKE, M ;

KOBAYASHI, T ;

DEGUCHI, K ;

KIMIZUKA, M ;

HORIGUCHI, S ;

KIUCHI, K .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) :266-268

[10] HIGH-FIELD TRANSPORT IN SIO2 ON SILICON INDUCED BY CORONA CHARGING OF UNMETALLIZED SURFACE [J].

WEINBERG, ZA ;

JOHNSON, WC ;

LAMPERT, MA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :248-255

← 1 2 →