GaN Power Transistors on Si Substrates for Switching Applications

被引：474

作者：

Ikeda, Nariaki ^{[1
]}

Niiyama, Yuki ^{[1
]}

Kambayashi, Hiroshi ^{[1
]}

Sato, Yoshihiro ^{[1
]}

Nomura, Takehiko ^{[1
]}

Kato, Sadahiro ^{[1
]}

Yoshida, Seikoh ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama R&D Labs, Kanagawa 2200073, Japan

来源：

PROCEEDINGS OF THE IEEE | 2010年 / 98卷 / 07期

关键词：

Current collapse; GaN power transistor; heterojunction field-effect transistor (HFET); MOS-HFET; FIELD-EFFECT TRANSISTORS; ALGAN/GAN HFETS; VOLTAGE; OPERATION; ENHANCEMENT; RESISTANCE; MOSFETS;

D O I：

10.1109/JPROC.2009.2034397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, GaN power transistors on Si substrates for power switching application are reported. GaN heterojunction field-effect transistor (HFET) structure on Si is an important configuration in order to realize a low loss and high power devices as well as one of the cost-effective solutions. Current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate. Furthermore, attempts for normally off GaN-FETs were examined. A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance (Ron) and a high breakdown voltage (Vb).

引用

页码：1151 / 1161

页数：11

共 28 条

[1] High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors [J].

Aktas, O ;

Fan, ZF ;

Mohammad, SN ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3872-3874

[2] POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS [J].

BALIGA, BJ .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :455-457

[3] WIDE BANDGAP COMPOUND SEMICONDUCTORS FOR SUPERIOR HIGH-VOLTAGE UNIPOLAR POWER DEVICES [J].

CHOW, TP ;

TYAGI, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) :1481-1483

[4] Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching [J].

Gao, Y ;

Ben-Yaacov, I ;

Mishra, UK ;

Hu, EL .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) :6925-6927

[5]

Huang W, 2008, INT SYM POW SEMICOND, P295

[6]

Ikeda N, 2008, INT SYM POW SEMICOND, P287

[7] Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application [J].

Ikeda, Nariaki ;

Kato, Kazuo ;

Kondoh, Kazuo ;

Kambayashi, Hiroshi ;

Li, Jiang ;

Yoshida, Seikoh .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :2028-2031

[8] 20 mΩ, 750 v high-power AlGaN/GaN heterostructure field-effect transistors on si substrate [J].

Iwakami, Shinichi ;

Machida, Osamu ;

Yanagihara, Masataka ;

Ehara, Toshihiro ;

Kaneko, Nobuo ;

Goto, Hirokazu ;

Iwabuchi, Akio .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (20-24) :L587-L589

[9]

Jiao RZ, 2008, INT CONF NANO MICRO, P1

[10] Enhancement-mode GaN Hybrid MOS-HFETs on Si substrates with Over 70 A operation [J].

Kambayashi, Hiroshi ;

Satoh, Yoshihiro ;

Niiyama, Yuki ;

Kokawa, Takuya ;

Iwami, Masayuki ;

Nomura, Takehiko ;

Kato, Sadahiro ;

Chow, T. Paul .

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, :21-+

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