Deposition of carbon nitride films by vacuum ion diode with explosive emission

被引：5

作者：

Korenev, SA

Perry, AJ

Elkind, A

Kalmukov, A

机构：

[1] AIMS Mkt, San Diego, CA 92127 USA

[2] New Jersey Inst Technol, Newark, NJ 07102 USA

[3] Joint Inst Nucl Res, Dubna 141980, Moscow Region, Russia

[4] Univ Michigan, Ion Beam Lab, Ann Arbor, MI 48109 USA

来源：

THIN SOLID FILMS | 1997年 / 308卷

关键词：

carbon nitride films; vacuum ion deposition; explosive emission;

D O I：

10.1016/S0040-6090(97)00424-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nitride films were synthesized using a novel technique based on the pulsed high voltage ion/electron diode with explosive emission (pulsed voltage 200-700 kV pulsed current 100-500 A cm(-2) (ions) 150-2000 A cm(-2) (electrons)). The method and its novel features are discussed as well as its application to the formation of the crystalline beta-phase in C3N4 films. Mixed elemental nitrogen and carbon films are formed by sequential deposition then subjected to ion and/or electron beam mixing to synthesize the C3N4 structure. The experimental conditions used for this pulsed process are described and the efficiency of the method for nitro Pn incorporation is demonstrated. The results presented indicate that beta-C3N4 crystallites are formed in an amorphous matrix. (C) 1997 Elsevier Science S.A.

引用

页码：233 / 238

页数：6

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