High mobility InN films grown by metal-organic vapor phase epitaxy

被引：18

作者：

Chang, CA ^{[1
]}

Shih, CF ^{[1
]}

Chen, NC ^{[1
]}

Chang, PH ^{[1
]}

Liu, KS ^{[1
]}

机构：

[1] Chang Gung Univ, Inst Electroopt Engn, Tao Yuan, Taiwan

来源：

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200405022

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm(2)/V sec was obtained for the as-grown films, with a donor concentration of 1-2 x 10(19) cm(-3). The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 mum, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2559 / 2563

页数：5

共 13 条

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