Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films

被引：17

作者：

Bourdais, S

Beaucarne, G

Slaoui, A

Poortmans, J

Semmache, B

Dubois, C

机构：

[1] CNRS, Lab PHASE, F-67037 Strasbourg, France

[2] IMEC, B-3001 Louvain, Belgium

[3] Inst Natl Sci Appl, LPM, F-69621 Villeurbanne, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 65卷 / 1-4期

关键词：

phosphorus diffusion; polycrystalline silicon;

D O I：

10.1016/S0927-0248(00)00131-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, the emitter formation on polycrystalline silicon (with grain size of 0.5-10 mum) deposited by chemical vapour deposition (CVD) on foreign substrates (thermal SiO2 and mullite ceramic) is studied. Phosphorus doping efficiency by POCl3 diffusion, APCVD + drive-in diffusion, and also rapid-thermal diffusion (RTD) from spin-on doping (SOD) sources were compared. For the first time, we report on photovoltaic results obtained on RTD-diffused emitters on pc-Si active layers deposited by rapid-thermal CVD, thus opening the way to an all rapid-thermal process for solar cell fabrication. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：487 / 493

页数：7

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