PHOSPHORUS DIFFUSION INTO SILICON FROM A SPIN-ON SOURCE USING RAPID THERMAL-PROCESSING

被引：36

作者：

HARTITI, B

SLAOUI, A

MULLER, JC

STUCK, R

SIFFERT, P

机构：

[1] Laboratoire PHASE (UPR du CNRS No. 292), Centre de Recherches Nucleaires, F-67037 Strasbourg Cedex, 23, rue du Loess

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.350519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diffusion of phosphorus into silicon from a doped spin-on glass source using rapid thermal processing is described. The structural and electrical characteristics of the resulting shallow junctions including atomic and carrier concentration profiles, sheet resistance, as well as the effects on bulk carrier transport properties were studied and compared to those resulting from the use of conventional furnace heating. The results show that sheet resistance as low as 15 OMEGA/open square and surface carrier concentration higher than 1 x 10(20) cm-3 are obtained in the annealed samples. Furthermore, a gettering effect is observed as the minority-carrier diffusion length measured by the surface photovoltage technique is improved after processing.

引用

页码：5474 / 5478

页数：5

共 31 条

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