ELECTRICAL BEHAVIOR OF THERMALLY DIFFUSED SILICON SOLAR-CELLS SUBMITTED TO RAPID ANNEALING

被引：4

作者：

FOGARASSY, E

MESLI, A

COURCELLE, E

GROB, A

SIFFERT, P

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 37卷 / 04期

关键词：

D O I：

10.1007/BF00614820

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：221 / 224

页数：4

共 21 条

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[2]

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[3]

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[4]

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[6]

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[7]

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[8]

Fossum J. G., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P120

[9] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

FULKS, RT ;

RUSSO, CJ ;

HANLEY, PR ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

[10] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J].

GAT, A .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :85-87

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