Natural ordering of ZnO1-xSex grown by radical. source MBE

被引：6

作者：

Iwata, K ^{[1
]}

Yamada, A ^{[1
]}

Fons, P ^{[1
]}

Matsubara, K ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

bandgap engineering; self-ordering; molecular beam epitaxy; zinc oxide; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(02)02206-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se. concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：633 / 637

页数：5

共 12 条

[1] Relationship between the lateral length and thickness of the platelets in naturally occurring strained layer superlattice structures [J].

Ferguson, IT ;

Norman, AG ;

Seong, TY .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :5733-5736

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INASSB STRAINED LAYER SUPERLATTICES - CAN NATURE DO IT BETTER [J].

FERGUSON, IT ;

NORMAN, AG ;

JOYCE, BA ;

SEONG, TY ;

BOOKER, GR ;

THOMAS, RH ;

PHILLIPS, CC ;

STRADLING, RA .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3324-3326

[3]

Iwata K, 2002, PHYS STATUS SOLIDI B, V229, P887, DOI 10.1002/1521-3951(200201)229:2<887::AID-PSSB887>3.0.CO

[4]

2-G

[5] ZnO growth on Si by radical source MBE [J].

Iwata, K ;

Fons, P ;

Niki, S ;

Yamada, A ;

Matsubara, K ;

Nakahara, K ;

Tanabe, T ;

Takasu, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :50-54

[6]

Iwata K, 2000, PHYS STATUS SOLIDI A, V180, P287, DOI 10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO

[7]

2-7

[8] Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE [J].

Iwata, K ;

Fons, P ;

Yamada, A ;

Matsubara, K ;

Niki, S .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :526-531

[9] Substrate lattice constant effect on the miscibility gap of MBE grown InAsSb [J].

Miyoshi, H ;

Horikoshi, Y .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :571-576

[10] Ge-related faceting and segregation during the growth of metastable (GaAs)1-x(Ge2)x alloy layers by metal-organic vapor-phase epitaxy [J].

Norman, AG ;

Olson, JM ;

Geisz, JF ;

Moutinho, HR ;

Mason, A ;

Al-Jassim, MM ;

Vernon, SM .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1382-1384

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