Recombination dynamics of excitons in Mg0.11Zn0.89O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

被引：24

作者：

Kubota, Masashi

Onuma, Takeyoshi

Tsukazaki, Atsushi

Ohtomo, Akira

Kawasaki, Masashi

Sota, Takayuki

Chichibu, Shigefusa F. ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Univ Tsukuba, Century COE Off 21st, Tsukuba, Ibaraki 3058573, Japan

[4] JST, ERATO, Nakamura Inhomogeneous Crystal Project, Kawaguchi 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

ZNO; PHOTOLUMINESCENCE;

D O I：

10.1063/1.2719168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recombination dynamics of excitons in Mg0.11Zn0.89O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMgO4 substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 mu J/cm(2) was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.

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页数：3

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