Evaluating the three common SiC polytypes for MESFET applications

被引：3

作者：

Roschke, M

Schwierz, F

Paasch, G

Schipanski, D

机构：

[1] Tech Univ Ilmenau, Dept Solid State Elect, D-98684 Ilmenau, Germany

[2] Inst Solid State & Mat Res Dresden, D-01171 Dresden, Germany

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

simulation; MESFET; SiC polytypes;

D O I：

10.4028/www.scientific.net/MSF.264-268.965

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The in-house 2D device simulator PROSA was used to simulate and compare MESFET structures made of the three SiC polytypes 3C, 4H and 6H. Starting with a simple 'standard' MESFET structure, the effect of variations in doping and gate length was studied. 4H MC MESFETs seemed to perform best overall, while 3C SiC seemed to work well at lower doping. Another series of simulations was used to study the effects of variations of the saturation velocity on the performance of SiC MESFETs.

引用

页码：965 / 968

页数：4

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