AFM lithography in constant current mode

An organosilane monolayer consisting of trimethylsilyl ([-Si(CH3)(3)], TMS) STOUPS prepared on the native oxide of a silicon substrate effectively served as a resist material for AFM-based nanolithography. The patterning of this resist was performed through its electrochemical degradation locally induced around the contact point of a conductive AFM probe while biasing the sample substrate positively, In the region where the probe passed, the monolayer resist was degraded and the underlying silicon oxide surface was selectively uncovered. The number of electrons injected into the probe-scanned region was controlled by conducting the AFM lithography in constant current mode. By means of this constant current AFM lithography a sufficient amount of electrons could be injected even at high probe-scan rates faster than 1000 mu m s(-1). II was demonstrated that the TMS monolayer resist was sensitive enough to allow line drawing at a probe scan rate of 5000 mu m s(-1).