A new silicon detector for microdosimetry applications in proton therapy

被引：64

作者：

Rosenfeld, AB ^{[1
]}

Bradley, PD

Cornelius, I

Kaplan, GI

Allen, BJ

Flanz, JB

Goitein, M

Van Meerbeeck, A

Schubert, J

Bailey, J

Takada, Y

Maruhashi, A

Hayakawa, Y

机构：

[1] Univ Wollongong, Dept Engn Phys, Wollongong, NSW 2522, Australia

[2] Harvard Univ, Sch Med, NPTC, Boston, MA 02114 USA

[3] Univ Tsukuba, Tsukuba, Ibaraki 305, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 04期

基金：

英国医学研究理事会;

关键词：

D O I：

10.1109/23.872983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon-on-insulator diode array with a sensitive depth of 10 microns has been developed for microdosimetry in proton therapy. The detector was coupled to a radiation-hard charge sensitive amplifier with the probe assembly capable of measuring-an LET down to 1.2 keV/mu m. The device has been successfully tested at two proton therapy centers: The 230 MeV Northeastern Proton Therapy Center, Boston and the 250 MeV Proton Medical Research Center at Tsukuba, Japan. The:device offers much improved spatial resolution compared with a-proportional gas counter particularly in the critical high dose region around the proton Bragg peak. Due to its small cross-sectional area (0.04 cm(2)) measurements may also be made in facilities with short high intensity beams.

引用

页码：1386 / 1394

页数：9

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