Playing with carbon and silicon at the nanoscale

被引:272
作者
Melinon, P. [1 ]
Masenelli, B. [1 ]
Tournus, F. [1 ]
Perez, A. [1 ]
机构
[1] Univ Lyon 1, CNRS, Lab Phys Mat Condensee & Nanostruct, F-69622 Villeurbanne, France
关键词
D O I
10.1038/nmat1914
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Because of its superior properties silicon carbide is one of the most promising materials for power electronics, hard- and biomaterials. In the solid phase, the electronic and optical properties are controlled by the stacking of double layers of Si and C atoms. In thin films, a change in the stacking order often requires stress, which can be achieved naturally in systems with nanometre length scale. For this reason, nanotubes, nanowires and clusters can be used as building blocks for the synthesis of novel materials. Furthermore, playing at the nanometre length scale enables the nature of the SiC bonding to be modified, which is of prime importance for atomic engineering of nanostructures. In this review, emphasis is placed on the theoretical principles associated with SiC cage-like clusters and experimental work resulting from them.
引用
收藏
页码:479 / 490
页数:12
相关论文
共 100 条
[61]  
Moore C.E., 1971, ATOMIC ENERGY LEVELS
[62]   Translation, rotation and removal of C60 on Si(100)-2x1 using anisotropic molecular manipulation [J].
Moriarty, P ;
Ma, YR ;
Upward, MD ;
Beton, PH .
SURFACE SCIENCE, 1998, 407 (1-3) :27-35
[63]   Binary continuous random networks [J].
Mousseau, N ;
Barkema, GT .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (44) :S5183-S5190
[64]   SiC nanotubes: A novel material for hydrogen storage [J].
Mpourmpakis, Giannis ;
Froudakis, George E. ;
Lithoxoos, George P. ;
Samios, Jannis .
NANO LETTERS, 2006, 6 (08) :1581-1583
[65]   Controlling the electronic structure of bilayer graphene [J].
Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, CA 94720, United States ;
不详 ;
不详 .
Science, 2006, 5789 (951-954) :951-954
[66]   Formation of As- and Ge-doped heterofullerenes [J].
Ohtsuki, T ;
Ohno, K ;
Shiga, K ;
Kawazoe, Y ;
Maruyama, Y ;
Masumoto, K .
PHYSICAL REVIEW B, 1999, 60 (03) :1531-1534
[67]   Photolysis experiments on SiC mixed clusters:: From silicon carbide clusters to silicon-doped fullerenes [J].
Pellarin, M ;
Ray, C ;
Lermé, J ;
Vialle, JL ;
Broyer, M ;
Blase, X ;
Kéghélian, P ;
Mélinon, P ;
Perez, A .
JOURNAL OF CHEMICAL PHYSICS, 1999, 110 (14) :6927-6938
[68]   Gas phase study of silicon-C60 complexes:: Surface coating and polymerization [J].
Pellarin, M ;
Ray, C ;
Lermé, J ;
Vialle, JL ;
Broyer, M ;
Mélinon, P .
JOURNAL OF CHEMICAL PHYSICS, 2000, 112 (19) :8436-8445
[69]   ANTIPHASE BOUNDARIES IN EPITAXIALLY GROWN BETA-SIC [J].
PIROUZ, P ;
CHOREY, CM ;
POWELL, JA .
APPLIED PHYSICS LETTERS, 1987, 50 (04) :221-223
[70]   Silicon-carbide nano-clusters: A pathway to future nano-electronics [J].
Ray, Asok K. ;
Huda, M. N. .
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2006, 3 (03) :315-341