Single-crystal field-effect transistors based on copper phthalocyanine

被引：211

作者：

Zeis, R ^{[1
]}

Siegrist, T ^{[1
]}

Kloc, C ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 02期

关键词：

D O I：

10.1063/1.1849438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field-effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge carrier mobilities of up to 1 cm(2)/V s combined with a low field-effect threshold were obtained. These remarkable FET characteristics, along with the highly stable chemical nature of Cu-Pc, make it an attractive candidate for device applications. (C) 2005 American Institute of Physics.

引用

页码：022103 / 1

页数：3

共 16 条

[11] Field-effect transistors on rubrene single crystals with parylene gate insulator [J].