IR bolometers made of polycrystalline silicon germanium

被引：93

作者：

Sedky, S

Fiorini, P

Caymax, M

Verbist, A

Baert, C

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Univ Rome 3, Dept Phys, I-00156 Rome, Italy

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 66卷 / 1-3期

关键词：

polycrystalline silicon germanium; bolometers; IR detection;

D O I：

10.1016/S0924-4247(98)00007-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the first fabrication of surface-micromachined microbolometers made of polycrystalline silicon-germanium alloy (poly Si0.7Ge0.3). The electrical and mechanical properties of this material have been measured and the effects of the deposition conditions and annealing temperature on them have also been investigated. The complete process for the bolometer fabrication is presented and the possibility of reducing the process temperature to 650 degrees C is demonstrated. The thermal behaviour of the device is fully analysed and it is demonstrated that the use of poly Si0.7Ge0.3 instead of polycrystalline Si (poly Si) decreases the thermal conductance of the device (values lower than 10(-6) W K-1 are obtained). Preliminary measurements give a value of 10(4) V W-1 for the IR responsivity. (C) 1998 Published by Elsevier Science S.A. All rights reserved.

引用

页码：193 / 199

页数：7

共 10 条

[1]

BALIGA S, 1993, SPIE P, V2225, P72

[2]

CORE TA, 1993, SOLID STATE TECH OCT, P39

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