1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells

被引：17

作者：

Garcia, CP

De Nardis, A

Pellegrini, V

Jancu, JM

Beltram, F

Müeller, BH

Sorba, L

Franciosi, A

机构：

[1] Univ Modena, Dipartimento Fis, I-41100 Modena, Italy

[2] Univ Trieste, Dipartimento Fis, I-34127 Trieste, Italy

[3] Scuola Normale Super Pisa, I-56126 Pisa, Italy

[4] INFM, I-56126 Pisa, Italy

[5] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 23期

关键词：

D O I：

10.1063/1.1331347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed room-temperature intersubband transitions at 1.26 mum in n-doped type-II In0.3Ga0.7As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electronic levels of the well following mid-infrared optical pumping of electrons from the barrier X-valley into the well ground state. (C) 2000 American Institute of Physics. [S0003-6951(00)02950-8].

引用

页码：3767 / 3769

页数：3

共 18 条

[1] TRANSIENT ABSORPTION-SPECTRA OF A MODULATION-DOPED GA0.47IN0.53AS/AI0.48IN0.52AS MULTIPLE QUANTUM WELL STRUCTURE MEASURED BY PICOSECOND INFRARED PULSES [J].