Threshold voltage control in organic thin film transistors with dielectric layer modified by a genetically engineered polypeptide

被引：33

作者：

Dezieck, Alex ^{[1
]}

Acton, Orb ^{[2
]}

Leong, Kirsty ^{[1
]}

Oren, Ersin Emre ^{[2
]}

Ma, Hong ^{[2
]}

Tamerler, Candan ^{[2
]}

Sarikaya, Mehmet ^{[2
]}

Jen, Alex K. -Y. ^{[1
,2
]}

机构：

[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA

[2] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期

关键词：

dielectric materials; polymers; thin film transistors; FIELD-EFFECT TRANSISTORS; BINDING PEPTIDES; MONOLAYERS;

D O I：

10.1063/1.3459978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Precise control over the threshold voltage of pentacene-based organic thin film transistors was achieved by inserting a genetically engineered quartz-binding polypeptide at the semiconductor-dielectric interface. A 30 V range was accessed with the same peptide by adjusting the pH of the solution for peptide assembly while leaving other device properties unaffected. Mobility of 0.1-0.2 cm(2) V(-1) s(-1) and on/off current ratio of >10(6) could be achieved for all devices regardless of the presence of the neutral peptide or the peptide assembled in acidic or basic conditions. This shift in threshold voltages is explained by the generation of charged species and dipoles due to variation in assembling conditions. Controlling device characteristics such as threshold voltage is essential for integration of transistors into electronic circuits. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3459978]

引用

页数：3

共 18 条

[11] Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator [J].