Improved near-infrared transparency in sputtered In2O3-based transparent conductive oxide thin films by Zr-doping

Transparent conductive Zr-doped In2O3 (In2-2xZr2xO3) films were deposited on glasses by sputtering method. High mobility of over 80 cm(2)/V s was achieved under a carrier density of 1.3-2.9x10(20) cm(-3) at Zr concentrations (x) of 0.014-0.022, and the film at x=0.022 showed the lowest resistivity of 2.6x10(-4) Omega cm. Reflecting the high mobility and the low carrier density, the transparency extended from the visible to the near-infrared (NIR) wavelength region with reduced magnitude of the free-carrier absorption. The results indicate that Zr-doped In2O3 films have a performance advantage for applications that require high conductivity and transparency in NIR wavelength region. (c) 2007 American Institute of Physics.