Emission spectrochemical analysis in dry etching process of InP by Cl2 inductively coupled plasma

被引:11
作者
Matsutani, A
Ohtsuki, H
Koyama, F
Iga, K
机构
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Samco Int Inc, Fujimi Ku, Kyoto 6128443, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 10期
关键词
dry etching; inductively coupled plasma (ICP); emission spectrochemical analysis; InP; Cl-2;
D O I
10.1143/JJAP.39.6109
中图分类号
O59 [应用物理学];
学科分类号
摘要
We carried out a diagnostic study of the Cl-2 inductively coupled plasma (ICP) etching process by means of spectrochemical analysis using a narrow-field optical fiber probe. Many elements including etching products such as Cl+, Si, In and SiClx were observed in the etching plasma. It was found that the state of the plasma is strongly dependent on the monitoring distance normal to the sample. To stabilize the dry etching process, it is important to monitor the plasma at the spot of the reaction between sample and plasma.
引用
收藏
页码:6109 / 6110
页数:2
相关论文
共 3 条
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