CO3O4 protective coatings prepared by Pulsed Injection Metal Organic Chemical Vapour Deposition

被引：47

作者：

Burriel, M

García, G

Santiso, J

Hansson, AN

Linderoth, S

Figueras, A

机构：

[1] CSIC, ICMAB, Lab Crystal Growth, Bellaterra 08193, Spain

[2] Riso Natl Lab, Mat Res Dept, DK-4000 Roskilde, Denmark

[3] Inst Fis, Juriquilla 76230, Queretaro, Mexico

来源：

THIN SOLID FILMS | 2005年 / 473卷 / 01期

关键词：

MOCVD; cobalt oxide; deposition process; XRD; coatings;

D O I：

10.1016/j.tsf.2004.07.081

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)(3) (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 degreesC. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects, to be used in Intermediate Temperature Solid Oxide Fuel Cells. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：98 / 103

页数：6

共 21 条

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