Negative capacitance in organic semiconductor devices: Bipolar injection and charge recombination mechanism

被引:138
作者
Ehrenfreund, E.
Lungenschmied, C.
Dennler, G.
Neugebauer, H.
Sariciftci, N. S.
机构
[1] Johannes Kepler Univ Linz, LIOS, A-4040 Linz, Austria
[2] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
基金
以色列科学基金会; 奥地利科学基金会;
关键词
D O I
10.1063/1.2752024
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. They account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation. Simple addition of the recombination current to the well established model of space charge limited current in the presence of traps yields excellent fits to the experimentally measured admittance data. The dependence of the extracted characteristic recombination time on the bias voltage is indicative of a recombination process which is mediated by localized traps. (c) 2007 American Institute of Physics.
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页数:3
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