Density of electronic states in amorphous carbons

被引:31
作者
Fanchini, G
Ray, SC
Tagliaferro, A
机构
[1] Politecn Torino, Dipartimento Fis, Turin, Italy
[2] Politecn Torino, Unita INFM, Turin, Italy
关键词
amorphous carbon; amorphous hydrogenated carbon; band structure; defects;
D O I
10.1016/S0925-9635(02)00376-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we deal with the origin and features of the density of electronic states in the various types of a-C and a-C:H films. In particular we discuss the effects of disorder, distortions and composition (i.e. hydrogen and sp(2) carbon fractions) on the density of states and the main optoelectronic properties. We show that the wide differences among the various amorphous carbons can be understood by introducing three characteristic lengths of the structure (i.e. distance between neighbouring clusters, decay length of pi states and 'accommodation length' of sp(2) clusters in the sp(3) network). Finally, we discuss additional features crucial in determining film properties, such as the correlation energy. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:891 / 899
页数:9
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