Electronic structure induced by lateral composition modulation in GaInAs alloys

被引：12

作者：

Mattila, T ^{[1
]}

Bellaiche, L ^{[1
]}

Wang, LW ^{[1
]}

Zunger, A ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 17期

关键词：

D O I：

10.1063/1.121303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been recently shown that growth of [001]-oriented short period (AC)(n)/(BC)(n) vertical superlattices (n similar to 1-2) spontaneously creates a lateral composition modulation in the substrate plane ([110] direction), when wire-like AC-rich and BC-rich domains alternate with a period of similar to 100-200 Angstrom. This creates a new type of lattice structure with orthogonal [001] and [110] strain fields and compositional waves. Using a three-dimensional plane-wave pseudopotential approach, we study here the electronic properties of this type of structure in a GaInAs alloy, predicting valence band splittings into distinctly polarized components, a less than or equal to 100 meV band-gap reduction and strong, type I electron and hole confinement in the In-rich lateral channels. (C) 1998 American Institute of Physics.

引用

页码：2144 / 2146

页数：3

共 19 条

[11]

Millunchick JM, 1997, APPL PHYS LETT, V70, P1402, DOI 10.1063/1.118589

[12] Spontaneous lateral composition modulation in AlAs/InAs short period superlattices via the growth front [J].