Spontaneous lateral composition modulation in AlAs/InAs short period superlattices via the growth front

被引：19

作者：

Millunchick, JM ^{[1
]}

Twesten, RD ^{[1
]}

Lee, SR ^{[1
]}

Follstaedt, DM ^{[1
]}

Jones, ED ^{[1
]}

Ahrenkiel, SP ^{[1
]}

Zhang, Y ^{[1
]}

Cheong, HM ^{[1
]}

Mascarenhas, A ^{[1
]}

机构：

[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 09期

关键词：

composition modulation; lateral modulation; superlattices;

D O I：

10.1007/s11664-997-0242-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spontaneous formation of lateral composition modulation in AlAs/InAs short period superlattices on InP (001) substrates has been investigated. Transmission electron microscopy and x-ray diffraction reciprocal space mapping show that the lateral modulation is very regular, with a periodicity along the [110] direction on the order of 180 Angstrom. A surprising result is that this material system also exhibits a lateral modulation along the \1 (1) over bar 0\ direction, with a periodicity of 330 Angstrom. Reflection high energy electron diffraction performed during the deposition revealed that the reconstruction changed from (2 x 1) during the InAs deposition cycle to (1 x 2) during the AlAs cycle, which may be related to the presence of the modulation in both <110> directions, High magnification transmission electron micrographs show that the surface is undulated and that these undulations correlate spatially with composition modulation. Detailed analysis of the images shows that the contrast observed is indeed due to composition modulation. Photoluminescence from the modulated layer is strongly polarized and red-shifted by 220 meV.

引用

页码：1048 / 1052

页数：5

共 24 条

[1] INTERFACE MORPHOLOGY DEVELOPMENT DURING STRESS-CORROSION CRACKING .1. VIA SURFACE DIFFUSION [J].