GROWTH OF GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES BY THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS

被引：25

作者：

CHOU, ST ^{[1
]}

HSIEH, KC ^{[1
]}

CHENG, KY ^{[1
]}

CHOU, LJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MICROELECTR LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.587932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaxIn1-xAs quantum wire (QWR) arrays were grown in situ by molecular beam epitaxy. A lateral composition modulation was achieved in the GaxIn1-xAs material system via the strain-induced lateral layer ordering process occurring spontaneously when (GaAs)n/(InAs)n short-period superlattices are grown on (100)-oriented on-axis InP substrates. The resulting quasiperiodic modulation of the GaxIn1-xAs composition, with a periodicity of 300 angstrom, offers a lateral quantum confinement along the growth plane. The quantum confinement in the growth direction is provided by sandwiching the thin (approx. 100 angstrom) laterally ordered GaxIn1-xAs layer between layers of bulk Al0.24Ga0.24In0.52As. The formation of the QWR array is confirmed by cross-sectional transmission electron microscopy and polarized photoluminescence measurements.

引用

页码：650 / 652

页数：3

共 14 条

[1] GAXIN1-XP MULTIPLE-QUANTUM-WIRE HETEROSTRUCTURES PREPARED BY THE STRAIN INDUCED LATERAL LAYER ORDERING PROCESS [J].