MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS

被引：5

作者：

CHYI, JI

SHIEH, JL

LIN, RM

NEE, TE

PAN, JW

机构：

[1] Department of Electrical Engineering, National Central University, Chungli

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.112273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface reconstruction of InAlAs on GaAs between 490 and 700-degrees-C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2x1) and (1x1) surfaces occur at a substrate temperature between 490 and 650-degrees-C, while at a temperature above 650-degrees-C, the ordered As-stabilized (3x2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.

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页码：699 / 701

页数：3

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