RESIDUAL STRAIN ANALYSIS OF INXGA1-XAS/GAAS HETEROEPITAXIAL LAYERS

被引：52

作者：

KRISHNAMOORTHY, V

LIN, YW

CALHOUN, L

LIU, HL

PARK, RM

机构：

[1] Department of Materials Science and Engineering, University of Florida, Gainesville

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 22期

关键词：

D O I：

10.1063/1.108107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in InxGa1-xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in InxGa1-xAs/GaAs epilayers which includes the influence of epilayer composition.

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页码：2680 / 2682

页数：3

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