EFFECT OF SUBSTRATE MISORIENTATION ON THE GROWTH OF GAXIN1-XP LATERAL QUANTUM-WELLS

We report the effects of misoriented GaAs substrates and varied substrate temperatures on the formation of GaxIn1−xP lateral quantum wells (LQWs) by the strain‐induced lateral‐layer ordering (SILO) process. Nominally [001] GaAs on‐axis substrates, [001] substrates cut 2° off toward the [110] direction, and [001] substrates cut 2° off toward the [1̄10] direction were used to simultaneously grow LQWs. The samples were characterized using plan‐view and cross‐sectional transmission electron microscopy and polarized photoluminescence spectroscopy. We found that regardless of the substrate misorientation or substrate growth temperature, the SILO process induced LQWs always formed along the [1̄10] direction; primarily determined by the direction of the group‐V dimer bonds on the surface during growth. © 1995, American Institute of Physics. All rights reserved.