Microtechnologies for pH ISFET chemical sensors

被引:55
作者
Cane, C
Gracia, I
Merlos, A
机构
关键词
D O I
10.1016/S0026-2692(96)00068-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A review of different microtechnologies for the fabrication of pH ion sensitive field effect transistor (ISFET) sensors is presented. Integrated ISFETs are of interest due to the advantages of low price, fast response and small dimensions that they present compared to ISE electrodes. ISFETs can be also applied to the detection of different ions, using the proper sensitive membranes. A lot of work has been done during the last few decades to obtain commercial devices, and many technologies and structures can be found in the literature. In this paper, both front-side and back-side contacted devices are studied, in order to determine the compatibility of different processes, devices and materials with standard CMOS technologies, which seems to be a goal for present and future applications. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:389 / 405
页数:17
相关论文
共 61 条
  • [1] ISFETS USING INORGANIC GATE THIN-FILMS
    ABE, H
    ESASHI, M
    MATSUO, T
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) : 1939 - 1944
  • [2] ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING
    AKIYAMA, T
    UJIHIRA, Y
    OKABE, Y
    SUGANO, T
    NIKI, E
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1936 - 1941
  • [4] FUTURE APPLICATIONS OF ISFETS
    BERGVELD, P
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1991, 4 (1-2) : 125 - 133
  • [5] HOW ELECTRICAL AND CHEMICAL-REQUIREMENTS FOR REFETS MAY COINCIDE
    BERGVELD, P
    VANDENBERG, A
    VANDERWAL, PD
    SKOWRONSKAPTASINSKA, M
    SUDHOLTER, EJR
    REINHOUDT, DN
    [J]. SENSORS AND ACTUATORS, 1989, 18 (3-4): : 309 - 327
  • [6] A PROCESS FOR THE COMBINED FABRICATION OF ION SENSORS AND CMOS CIRCUITS
    BOUSSE, L
    SHOTT, J
    MEINDL, JD
    [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) : 44 - 46
  • [7] TIME-DEPENDENCE OF THE CHEMICAL RESPONSE OF SILICON-NITRIDE SURFACES
    BOUSSE, L
    HAFEMAN, D
    TRAN, N
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) : 361 - 367
  • [8] OPERATION OF CHEMICALLY SENSITIVE FIELD-EFFECT SENSORS AS A FUNCTION OF THE INSULATOR-ELECTROLYTE INTERFACE
    BOUSSE, L
    DEROOIJ, NF
    BERGVELD, P
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1263 - 1270
  • [9] CANE C, 1991, 6TH P INT C SOL STAT, P225
  • [10] CHAN CF, 1983, P IEDM 83 M JUL, P651