On the environment of optically active Er in Si-electroluminescence devices

被引：33

作者：

Lanzerstorfer, S ^{[1
]}

Palmetshofer, L

Jantsch, W

Stimmer, J

机构：

[1] Johannes Kepler Univ, Inst Expt Phys, A-4040 Linz, Austria

[2] TU Munchen, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.120900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report sharp, atomlike electroluminescence spectra close to 1.54 mu m from a low-dose (3.5 x 10(18) cm(-3)) erbium-implanted silicon light-emitting diode operating under forward bias. The well-resolved Stark splitting identifies the isolated interstitial Er with cubic site symmetry as the source. The full width at half maximum of the most intense line is 0.5 nm. A comparison with a highly Er (5 x 10(19) cm(-3)) and O (1 x 10(20) cm(-3)) doped diode with a high doping gradient grown by molecular beam epitaxy and with Er-implanted silica is given with respect to fine structure and thermal quenching. The room-temperature emission of the highly Er and O doped diode is ascribed to Er containing silica precipitates within the c-Si matrix. (C) 1998 American Institute of Physics.

引用

页码：809 / 811

页数：3

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