Defect levels in the band gap of amorphous selenium

被引：30

作者：

Benkhedir, ML

Aida, MS

Adriaenssens, GJ

机构：

[1] Univ Louvain, Lab Halfgeleiderfys, B-3001 Louvain, Belgium

[2] Univ Mentouri, Phys Mat Lab, Constantine 25000, Algeria

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 344卷 / 03期

关键词：

D O I：

10.1016/j.jnoncrysol.2004.08.062

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Energy locations in the band gap have been determined for the thermally accessible levels of the negative-U defect centers in amorphous selenium. Both the temperature dependence of the steady-state photocurrents, and an analysis of emission currents in the post-transit regime of a time-of-flight transient photoconductivity experiment on the same samples, agree on the presence of defect levels at (0.42 +/- 0.04) eV above the valence band mobility edge and (0.53 +/- 0.06) eV below the conduction band. Both measured current levels and the resolved energy positions of the defects are subject to the Poole-Frenkel effect. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：193 / 198

页数：6

共 22 条

[1] DENSITY OF STATES IN A-SE FROM COMBINED ANALYSIS OF XEROGRAPHIC POTENTIALS AND TRANSIENT TRANSPORT DATA [J].

ABKOWITZ, M .

PHILOSOPHICAL MAGAZINE LETTERS, 1988, 58 (01) :53-57

[2] The Gueorgi Nadjakov Lecture - Negative-U defects in chalcogenide glasses: elusive or non-existent? [J].

Adriaenssens, GJ ;

Qamhieh, N .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) :605-609

[3] Defect levels and charge carrier photogeneration in amorphous selenium layers [J].

Ernelianova, EV ;

Qamhieh, N ;

Brinza, M ;

Adriaenssens, GJ ;

Kasap, SO ;

Johanson, RE ;

Arkhipov, VI .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2003, 326 :215-219

[4] Requirements on amorphous semiconductors for medical X-ray detectors [J].

Hoheisel, M ;

Bätz, L .

THIN SOLID FILMS, 2001, 383 (1-2) :132-136

[5] X-ray photoconductors and stabilized a-Se for direct conversion digital flat-panel X-ray image-detectors [J].

Kasap, SO ;

Rowlands, JA .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2000, 11 (03) :179-198

[6] TIME-OF-FLIGHT DRIFT MOBILITY MEASUREMENTS ON CHLORINE-DOPED AMORPHOUS SELENIUM FILMS [J].

KASAP, SO ;

JUHASZ, C .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (04) :703-720

[7] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[8] Negative correlation energy and valence alternation in amorphous selenium: An in situ optically induced ESR study [J].

Kolobov, AV ;

Kondo, M ;

Oyanagi, H ;

Matsuda, A ;

Tanaka, K .

PHYSICAL REVIEW B, 1998, 58 (18) :12004-12010

[9] Negative correlation energy in amorphous selenium: experimental evidence [J].

Kolobov, AV ;

Kondo, M ;

Matsuda, A ;

Tanaka, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :842-846

[10]

MAN C, 1973, ELECT STRUCTURAL PRO, P527

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