Material distribution across the interface of random and ordered island arrays

被引：38

作者：

Kar, GS ^{[1
]}

Kiravittaya, S ^{[1
]}

Stoffel, M ^{[1
]}

Schmidt, OG ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.93.246103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We grow single and twofold stacked island layers on patterned substrates and investigate the material distribution in and around the patterned area. For both layers a pronounced material depletion region occurs outside the pattern. The material gradients across the planar-patterned interface are symmetric in the first, but highly asymmetric in the second layer. We can describe these phenomena by simulations that take into account the surface curvature for the first and a strain-field modulated surface for the second layer.

引用

页数：4

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