共 35 条
[21]
KOHN JA, 1956, AM MINERAL, V41, P355
[23]
InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1997, 36 (9AB)
:L1130-L1132
[24]
LAGRENAUDIE J, 1956, J CHIM PHYS PCB, V53, P222
[25]
Refractive index of InGaN/GaN quantum well
[J].
JOURNAL OF APPLIED PHYSICS,
1998, 84 (11)
:6312-6317
[26]
Mack MP, 1997, MRS INTERNET J N S R, V2, part. no.
[27]
Phase separation in InGaN/GaN multiple quantum wells
[J].
APPLIED PHYSICS LETTERS,
1998, 72 (14)
:1730-1732
[28]
NAKAMURA S, 1996, JPN J APPL PHYS PT 1, V35, P74
[29]
PANKOVE JI, 1997, SEMICONDUCTORS SEMIM, V50
[30]
PASTRNAK J, 1966, PHYS STATUS SOLIDI, V14, pK5