SiO2 insulator film synthesized at 100 °C using tetramethylsilane by inductively coupled plasma chemical vapor deposition

SiO2 insulator films were deposited at the substrate temperature of 100 degrees C by the inductively coupled plasma chemical vapor deposition (ICP-CVD) method using an organic silicon source of tetramethylsilane (4MS) and a N2O precursor. Fourier transform infrared (FT-IR) absorption peaks of O-H stretch, Si-H stretch, and Si-CH3 stretch were not observed in these SiO2 films. The refractive index of SiO2 films at 100 degrees C was 1.480. These results indicate that typical SiO2 films can be obtained by ICP-CVD using 4MS and N2O by increasing the substrate temperature to 100 degrees C. Leakage currents of 1.6nA/cm(2) and 1 mu A/cm(2) at breakdown voltage of 1 and 7 MV/cm, respectively, were achieved.