Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

被引：87

作者：

Bochkareva, N. I. ^{[1
]}

Voronenkov, V. V. ^{[3
]}

Gorbunov, R. I. ^{[1
]}

Zubrilov, A. S. ^{[1
]}

Lelikov, Y. S. ^{[1
]}

Latyshev, P. E. ^{[2
]}

Rebane, Y. T. ^{[1
]}

Tsyuk, A. I. ^{[3
]}

Shreter, Y. G. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg State Univ, VF Fock Inst Phys, St Petersburg 198504, Russia

[3] St Petersburg State Polytech Univ, St Petersburg 194251, Russia

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

关键词：

defect states; gallium compounds; III-V semiconductors; light emitting diodes; semiconductor quantum wells; tunnelling; wide band gap semiconductors; GAN; ELECTROLUMINESCENCE; GREEN; BLUE; TEMPERATURE; EMISSION; STATES;

D O I：

10.1063/1.3367897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quantum efficiency of GaN-based light-emitting diodes (LEDs) is investigated at temperatures 77-300 K. It is found that the efficiency droop is due to a decrease in the internal quantum efficiency (IQE) in the low-energy part of the emission spectrum. The efficiency starts to decrease at a temperature independent forward voltage of U-max approximate to 2.9 V. At this voltage tunneling current through the LED-structure begins to dominate. It is suggested that the external quantum efficiency droop is related to reduction of the IQE due to tunneling leakage of carriers from the quantum well (QW) to defect states in barriers, and to reduction of the injection efficiency by excess tunneling current under QW through deep defect states in barriers.

引用

页数：3

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