Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films

被引:24
作者
Ando, A
Hasunuma, R
Maeda, T
Sakamoto, K
Miki, K
Nishioka, Y
Sakamoto, T
机构
[1] Electrotech Lab, ETL, Tsukuba, Ibaraki 3058568, Japan
[2] Texas Instruments Tsukuba R&D Ctr Ltd, Tsukuba, Ibaraki 3050841, Japan
关键词
silicon oxide; electron tunneling; dielectric breakdown; atomic force microscopy (AFM);
D O I
10.1016/S0169-4332(00)00223-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have demonstrated the characterizations the local electrical properties of ultrathin (1-4 nm) SiO2/Si(001) structures using a conducting atomic force microscopy with a nanometer-scale resolution in a vacuum (1 x 10(-5) Pa). The measurement in a vacuum enables to reduce the influence of adsorbed water on quantitative current measurements, while there is a problem at the measurement in air of 60% humidity. Fitting to the Fowler-Nordheim equation is good at thicker SiO2 films more than similar to 3 nm. We have also demonstrated the results of continuous current-voltage measurements during the breakdown process by charge injection through a conducting probe. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:401 / 405
页数:5
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